high voltage application. feature complementary to ktc1027. maximum rating (ta=25 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 2 5 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ 1997. 6. 24 1/2 semiconductor technical data KTA1023 epitaxial planar pnp transistor revision no : 1 electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current i c -800 ma emitter current i e 800 ma collector power dissipation p c 1 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-120v, i e =0 - - -100 na emitter cut-off current i ebo v eb =-5v, i c =0 - - -100 na collector-emitter saturation voltage v (br)ceo i c =-10ma, i b =0 -120 - - v emitter-base breakdwon voltage v (br)ebo i e =-1ma, i c =0 -5 - - v dc current gain h fe (note) v ce =-5v, i c =-100ma 80 - 240 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -1.0 v base-emitter voltage v be v ce =-5v, i c =-500ma - - -1.0 v transition frequency f t v ce =-5v, i c =-100ma - 120 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - - 40 pf note : h fe classification o:80 160, y:120 240
1997. 6. 24 2/2 KTA1023 revision no : 1
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